Related papers: Measurement of Ultrafast Carrier Dynamics in Epita…
Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We…
Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale…
The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon…
The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored.…
Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices,…
The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong…
The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on…
We study coherent nonlinear dynamics of carriers under ultrafast interband excitation of an intrinsic graphene. The Rabi oscillations of response appear with increasing of pumping intensity. The photoexcited distribution is calculated…
Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains…
The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region…
The nonequilibrium dynamics of carriers and phonons in graphene is investigated by solving the microscopic kinetic equations with the carrier-phonon and carrier-carrier Coulomb scatterings explicitly included. The Fermi distribution of hot…
Understanding and controlling hot-carrier relaxation in graphene is crucial for advancing ultrafast optoelectronic and terahertz technologies. Here, we investigate carrier cooling dynamics in monolayer and bilayer graphene using…
Understanding the ultrafast dynamics of photoexcited charges in graphene is essential, as the microscopic mechanisms underlying these dynamics determine many of graphene's optical, optothermal, and optoelectronic properties. These are…
Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…
We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the…
Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging…
A novel approach based on the merging of the out--of--equilibrium Green's function method with the ab-initio, Density--Functional--Theory is used to describe the ultra--fast carriers relaxation in Silicon. The results are compared with…
Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging…