Related papers: Epitaxial influence on the ferromagnetic semicondu…
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~ 3.9x10^14 cm^-2 carriers into the EuTiO3.…
Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the…
Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted…
The transition temperatures of epitaxial films of Fe(Te0:9Se0:1) are remarkably insensitive to applied magnetic field, leading to predictions of upper critical fields Bc2(T = 0) in excess of 100 T. Using pulsed magnetic fields, we find…
A large positive magnetoresistivity (up to tens of percents) is observed in both underdoped and overdoped superconducting La2-xSrxCuO4 epitaxial thin films at temperatures far above the superconducting critical temperature Tc. For the…
The dielectric constant of the incipient ferroelectric EuTiO$_3$ exhibits a sharp decrease at about 5.5K, at which temperature antiferromagnetic ordering of the Eu spins simultaneously appears, indicating coupling between the magnetism and…
We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a…
Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic…
In high Tc superconductors the magnetic and electronic properties are determined by the probability that valence electrons virtually jump from site to site in the CuO2 planes, a mechanism opposed by on-site Coulomb repulsion and favored by…
High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a…
Rutile TiO2 is a paradigmatic transition metal oxide with applications in optics, electronics, photocatalysis, etc., that are subject to pervasive electron-phonon interaction. To understand how energies of its electronic bands, and in…
We have investigated the ultrafast spin dynamics in EuO thin films by time-resolved Faraday rotation spectroscopy. The photoinduced magnetization is found to be increased in a transient manner, accompanied with subsequent demagnetization.…
Using a density functional method with explicit account for strong Coulomb repulsion within the 4f shell, we calculate effective exchange parameters and the corresponding ordering temperatures of the (ferro)magnetic insulating Eu…
We present analytic expressions for the temperature dependent magnetization and magnon dispersion relation of the antiferromagnetic (AFM) EuTe and the ferromagnetic (FM) EuO. These bulk semiconductors represent concentrated spin systems for…
The Co-doped anatase TiO$_{2}$, a recently discovered room-temperature ferromagnetic insulator, has been studied by the first-principles calculations in the pseudo-potential plane-wave formalism within the local-spin-density approximation…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and…
Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase…
Electrical resistivity \rho(T) of the 5f ferromagnet UGa2 was investigated for single-crystal samples as a function of pressure and magnetic field. The Curie temperature monotonously increases from T$_{C}$ = 124 K under quasi-hydrostatic…
We use magnetoresistance measurements at high magnetic field (B \leq 65 T) and low temperature (T \geq 500 mK) to gain fresh insights into the behavior of the upper critical field, Hc2, in superconducting ultrathin FeSe films of varying…