Related papers: Nanomechanical Spin-Polarizer
Phenomena of rotation and oscillations of particle spin are discussed for particles rotating in storage ring. The fact that these effects are described by spin-dependent part of zero-angle scattering amplitude allows to use them for the…
Proposal for construction of a source of spin-polarized current based on quantum point contact with local spin-orbit interaction is presented. We show that spin-orbit interaction present within the narrowing acts like a spin filter. The…
We have studied spin carrier dynamics under full spin-orbit coupling. The anisotropy of dispersions for independent circular spinor polarizations is explored as a possible vertical multichannel voltage controlled spin-filter. Small voltage…
We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…
We experimentally demonstrate a technique for the generation of optical beams carrying orbital angular momentum using a planar semiconductor microcavity. Despite being isotropic systems, the transverse electric - transverse magnetic (TE-TM)…
In this paper we have enlightened the spin related issues of tilted Electron vortex beams. We have shown that in the skyrmionic model of electron we can have the spin Hall current considering the tilted type of electron vortex beam. We have…
We investigate the spin-dependent transport properties of two-dimensional electron gas (2DEG) systems formed in diluted magnetic semiconductors and in the presence of Rashba spin-orbit interaction in the framework of the scattering matrix…
The optical spin Hall effect (OSHE) is a transport phenomenon of exciton polaritons in semiconductor microcavities, caused by the polaritonic spin-orbit interaction, that leads to the formation of spin textures. In the semiconductor cavity,…
We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a…
Spin currents may be generated by applying bias voltages V to the nanostructures even in the absence of spin-active ferromagnetic interfaces. Most theoretical proposals concentrate on a concrete spin-orbit interaction and on the…
By studying the time and spatial evolution of a pulse of the spin polarization in $n$-type semiconductor quantum wells, we highlight the importance of the off-diagonal spin coherence in spin diffusion and transport. Spin oscillations and…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
Using First-principle calculations, substrate effect of O-terminated (rt3 x rt3) MgO (111) on graphene was investigated for spintronics application. Surprisingly, the graphene can be turned into a spin-polarized semiconductor, which implies…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
Spin is an intrinsically quantum property, characterized by angular momentum. A change in the spin state is equivalent to a change in the angular momentum or mechanical torque. This spin-induced torque has been invoked as the intrinsic…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…