Related papers: Defect healing at room temperature in pentacene th…
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction…
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes…
Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The…
Contrary to most materials, graphene exhibits a negative thermal expansion coefficient (TEC), i.e it contracts when heated. This contraction is due to the thermal excitation of low energy out-of-plane vibration modes. These flexural modes…
Results of X-band microwave surface impedance measurements of FeSe1-xTex very thin film are reported. The effective surface resistance shows appearance of peak at T less and near Tc when plotted as function of temperature. The authors…
Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low…
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
We experimentally study for the first time the self-heating normal domain in magnetic field using nanowires made of granular NbTiN films with sub-10~nm thicknesses. Specifically, we found that at temperatures below 10 K, the heat capacity…
We have studied the low-temperature electrical transport properties of Pb$_x$(SiO$_2$)$_{1-x}$ ($x$ being the Pb volume fraction) nanogranular films with thicknesses of $\sim$1000 nm and $x$ spanning the dielectric, transitional, and…
We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon…
Theoretical calculations, based on hybrid exchange density functional theory, are used to show that in graphene a periodic array of defects generates a ferromagnetic ground state at room temperature for unexpectedly large defect…
Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…
The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each…
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…
We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…
The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening…
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…
Perovskite-based optoelectronic devices have shown great promise for solar conversion and other optoelectronic applications, but their long-term performance instability is regarded as a major obstacle to their widespread deployment.…