Related papers: Impurity-induced step interactions: a kinetic Mont…
Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown…
With a Si(001) vicinal surface in mind, we study step wandering instability on a vicinal surface with an anisotropic surface diffusion whose orientation dependence alternates on each consecutive terrace. In a conserved system step wandering…
We consider a vicinal face, where atoms and impurities impinge and evaporate to a vapor phase, to study how the surface diffusion and evaporation of impurities affect step bunching induced by impurities. When the lifetime of impurities on…
We studied the step dynamics during sublimation and growth in the presence of electromigration force acting on the adatoms. In the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps we formulate a…
The steps at the crystal surfaces could be transparent for the migrating adatoms. In the case of significant transparency the velocity of a given step in a given moment is affected by detachment of atoms from rather distant steps in rather…
In order to study the unstable step motion on vicinal crystal surfaces we devise vicinal Cellular Automata. Each cell from the colony has value equal to its height in the vicinal, initially the steps are regularly distributed. Another array…
We model an apparent instability seen in recent experiments on current induced step bunching on Si(111) surfaces using a generalized 2D BCF model, where adatoms have a diffusion bias parallel to the step edges and there is an attachment…
Using a Monte Carlo method on a lattice model of a vicinal surface with short-range step-step attraction, we show that, at low temperature and near equilibrium, there is an inhibition of the motion of macro-steps. This inhibition leads to a…
We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the…
Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…
A sublimating vicinal crystal surface can undergo a step bunching instability when the attachment-detachment kinetics is asymmetric, in the sense of a normal Ehrlich-Schwoebel effect. Here we investigate this instability in a model that…
We devise a new 1D atomistic scale model of vicinal growth based on Cellular Automaton. In it the step motion is realized by executing the automaton rule prescribing how adatoms incorporate into the vicinal crystal. Time increases after…
We consider a simple model for the growth of isolated steps on a vicinal crystal surface. It incorporates diffusion and drift of adatoms on the terrace, and strong step and kink edge barriers. Using a combination of analytic methods and…
We approach the old-standing problem of vicinal crystal surfaces destabilized by step-down and step step-up currents from a unified modelling viewpoint with focus on both the initial and the intermediate stages of the instability. We…
The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and…
We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent {\gamma}, connecting the…
On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$…
We formulate a new (1+1)D step model of potentially unstable vicinal growth that we call "C+ - C-" model and study the step bunching process in it. The basic assumption is that the equilibrium adatom concentrations on both sides of the step…
This work provides a ground for a quantitative interpretation of experiments on step bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step bunching…
The morphology of a growing crystal surface is studied in the case of an unstable two-dimensional step flow. Competition between bunching and meandering of steps leads to a variety of patterns characterized by their respective instability…