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Electronic transport in highly doped but still insulating silicon at low temperatures is dominated by hopping between localized states; it serves as a model system of a disordered solid for which the electronic interaction can be…

Strongly Correlated Electrons · Physics 2007-05-23 Marco Hering , Marc Scheffler , Martin Dressel , Hilbert v. Lohneysen

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…

We study the hopping conductivity in a composite made of Gaussian coils of flexible metallic wires randomly and isotropically suspended in an insulator at such concentrations that the spheres containing each wire overlap. Uncontrolled…

Disordered Systems and Neural Networks · Physics 2007-05-23 Tao Hu , B. I. Shklovskii

We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material…

Materials Science · Physics 2008-05-12 Elvira Ritz , Martin Dressel

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of…

Strongly Correlated Electrons · Physics 2009-10-31 s. Bogdanovich , D. Simonian , S. V. Kravchenko , M. P. Sarachik , R. N. Bhatt

We study the hopping conduction in a composite made of straight metallic nanowires randomly and isotropically suspended in an insulator. Uncontrolled donors and acceptors in the insulator lead to random charging of wires and hence finite…

Disordered Systems and Neural Networks · Physics 2007-05-23 Tao Hu , B. I. Shklovskii

Electronic transport properties of the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state…

Strongly Correlated Electrons · Physics 2017-05-31 A. B. Odobescu , A. A. Maizlakh , N. I. Fedotov , S. V. Zaitsev-Zotov

We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 D. P. Wang , D. E. Feldman , B. R. Perkins , A. J. Yin , G. H. Wang , J. M. Xu , A. Zaslavsky

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully…

Materials Science · Physics 2020-09-16 Mao Wang , A. Debernardi , Wenxu Zhang , Chi Xu , Ye Yuan , Yufang Xie , Y. Berencén , S. Prucnal , M. Helm , Shengqiang Zhou

The phononless hopping conductivity of a disordered system with localized states is studied in a broad range of frequencies by straightforward computer simulations taking into account Coulomb interactions. At sufficiently low temperatures,…

Disordered Systems and Neural Networks · Physics 2009-11-11 J. Matulewski , S. D. Baranovskii , P. Thomas

We have conducted temperature and frequency dependent transport measurements in amorphous Nb_x Si_{1-x} samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb…

Strongly Correlated Electrons · Physics 2009-11-07 Erik Helgren , George Grüner , Martin Ciofalo , David V. Baxter , John P. Carini

We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 S. S. Murzin , M. Weiss , A. G. M. Jansen , K. Eberl

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly…

Strongly Correlated Electrons · Physics 2020-03-05 D. A. Dobushovskyi , A. M. Shvaika

In this work, we revisit the issue of the nature of electronic transport in nickel oxide (NiO) and show that the widely used model of free small polaron hopping, initially raised to characterize transport in high-purity samples, is not…

Other Condensed Matter · Physics 2019-06-26 Robert Karsthof , Marius Grundmann , Markus Arthur Anton , Friedrich Kremer

In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low…

Mesoscale and Nanoscale Physics · Physics 2022-02-24 Yi Huang , Yanjun He , Brian Skinner , B. I. Shklovskii

We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was…

Strongly Correlated Electrons · Physics 2009-10-31 B. Sandow , K. Gloos , R. Rentzsch , A. N. Ionov , W. Schirmacher

We present a study of the temperature (T) dependence of the dc electrical conductivity of polyaniline pellets doped over a wide range. A crossover between low-T variable-range hopping and high-T nearest-neighbor hopping has been found below…

Strongly Correlated Electrons · Physics 2012-12-11 Mirko Baćani , Mario Novak , Ivan Kokanović , Dinko Babić

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily…

Complex AC-conductance, $\sigma^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $\Delta\Gamma=\Gamma(H)-\Gamma(0)$, and velocity, $\Delta…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 I. L. Drichko , A. M. Diakonov , I. Yu. Smirnov , A. V. Suslov , Y. M. Galperin , A. I. Yakimov , A. I. Nikiforov

The temperature and electrical field dependent conductivity of n-type CdSe nanocrystal thin films is investigated. In the low electrical field regime, the conductivity follows G ~ exp(-(T*/T)^0.5) in the temperature range 10K<T<120K. At…

Materials Science · Physics 2009-11-10 Dong Yu , Congjun Wang , Brian L. Wehrenberg , Philippe Guyot-Sionnest
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