Related papers: Average Density of States in Disordered Graphene s…
The average density of states (DoS) of the one-dimensional Dirac Hamiltonian with a random mass on a finite interval [0,L] is derived. Our method relies on the eigenvalues distributions (extreme value statistics problem) which are…
Density of states (DOS) of graphene under a high uniform magnetic field and white-noise random potential is numerically calculated. The disorder broadened zero-energy Landau band has a Gaussian shape whose width is proportional to the…
We study the density of states (DoS) $\nu(E)$ in a normal-metallic (N) film contacted by a bulk superconductor (S). We assume that the system is diffusive and the SN interface is transparent. In the limit of thin N layer (compared to the…
We consider strained graphene, modelled by the two-dimensional massive Dirac operator, with potentials corresponding to charge distributions with vanishing total charge, non-vanishing dipole moment and finitely many point charges of…
We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by…
We present a correction method for the density of states (DOS) obtained from the generalized ensemble simulations. The DOS is proportionally corrected to match the exact values and/or good approximations known for the system. We demonstrate…
The phonon density of states (DOS) of graphene with different types of point defects (carbon isotopes, substitution atoms, vacancies) is considered. Using a solvable model which is based on the harmonic approximation and the assumption that…
Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorder in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal…
Defects in graphene are of crucial importance for its electronic and magnetic properties. Here impurity effects on the electronic structure of surrounding carbon atoms are considered and the distribution of the local densities of states…
We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a…
We calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main…
We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field…
We calculate the density of states of a disordered inhomogeneous d-wave superconductor in a magnetic field. The field-induced vortices are assumed to be pinned at random positions and the effects of the scattering of the quasi-particles off…
By considering the quantum-mechanically minimum allowable energy interval, we exactly count number of states (NOS) and introduce discrete density of states (DOS) concept for a particle in a box for various dimensions. Expressions for…
The low-energy quasiparticle states of a disordered d-wave superconductor are investigated theoretically. A class of such states, formed via tunneling between the Andreev bound states that are localized around extended impurities (and…
Electronic properties of disordered binary alloys are studied via the calculation of the average Density of States (DOS) in two and three dimensions. We propose a new approximate scheme that allows for the inclusion of local order effects…
The density of states of Dirac fermions with a random mass on a two-dimensional lattice is considered. We give the explicit asymptotic form of the single-electron density of states as a function of both energy and (average) Dirac mass, in…
The effect of weak potential and bond disorder on the density of states of graphene is studied. By comparing the self-consistent non-crossing approximation on the honeycomb lattice with perturbation theory on the Dirac fermions, we…
We consider the effect of disorder on the tight-binding Hamiltonians with a flat band and derive a common mathematical formulation of the average density of states and inverse participation ratio applicable for a wide range of them. The…
We calculate the phonon density of states (DOS) for strongly amorphous materials with a short-ranged interatomic potential. Exponentially decaying and abruptly truncated interatomic potentials are examined. Thermally excited mean square…