Related papers: Strong spin-orbit interactions and weak antilocali…
We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas…
We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not…
We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…
We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of…
Tunable magnetic interactions in high-mobility nonmagnetic semiconductor heterostructures are centrally important to spin-based quantum technologies. Conventionally, this requires incorporation of "magnetic impurities" within the…
We have measured weak antilocalization effects, universal conductance fluctuations, and Aharonov-Bohm oscillations in the two-dimensional electron gas formed in InGaAs/AlInAs heterostructures. This system possesses strong spin-orbit…
We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer,…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples…
High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can…
We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate…
We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length is typically between 100 nm and 200 nm at 20 mK. Strong spin-orbit interaction in the…
Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas,…