Related papers: Terahertz detection with delta-doped GaAs/AlAs mul…
In this work, the linear absorption spectra for periodic arrays of GaAs-GaAsAl quantum wells with different thicknesses, inside electromagnetic wave has been studied. The eigen energies and eigen functions are calculated by solving the…
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
Because of the ultrafast and photon-driven nature of the transport in their active region, we demonstrate that quantum cascade lasers can be operated as resonantly amplified terahertz detectors. Tunable responsivities up to 50 V/W and noise…
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The…
We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band…
The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…
We achieve high detectivity terahertz sensing using a silicon nitride nanomechanical resonator functionalized with a metasurface absorber. High performances are achieved by striking a fine balance between the frequency stability of the…
There has been a significant advancement in terahertz radiation sources in the past decade, making milliwatt terahertz power levels accessible in both continuous-wave and pulsed operation. Such high-power terahertz radiation sources…
Terahertz radiation finds an increasing number of applications, yet efficient generation and detection remain a challenge and an active area of research. In particular, the precise detection of weak and narrowband terahertz signals is…
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18…
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…
Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz.…
Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically…
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…
A far-infrared system measures the full complex Faraday angle, rotation as well as ellipticity, with an unprecedented accuracy of 10\,$\mu$rad/T. The system operates on several far-infrared laser lines in the spectral range from 0.3 to 6…
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…
To investigate the electronic structure of Weyl semimetals Ta$Pn$ ($Pn=$P, As), optical conductivity [$\sigma(\omega)$] spectra are measured over a wide range of photon energies and temperatures, and these measured values are compared with…