Related papers: Suppression of rectification at metal-Mott-insulat…
Correlated physics in nearly flat topological bands is a central theme in the study of moir\'e materials. While ground states at integer fillings are typically identified as quantum Hall ferromagnets within a Hartree-Fock framework, we…
Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing…
Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a…
We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one…
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott…
Charge excitations in Mott insulators (MIs) are distinct from their band-insulator counterparts and they can provide a mechanism for energy harvesting in solar cells based on strongly correlated electronic materials. In this paper, we study…
Transport through a 1D Mott-Hubbard insulator of a finite length $L$ is studied beyond perturbative approach. At special value of the low energy constant of the interaction we have mapped the problem onto the exactly solvable models and…
To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory (LDA+U) to (n,m) multilayers, 1<n,m<9. If the on-site repulsion on Ti is large enough to model the magnetic insulating behavior of…
We study the quantum phase transition between a band (``ionic'') insulator and a Mott-Hubbard insulator, realized at a critical value U=Uc in a bipartite Hubbard model with two inequivalent sites, whose on-site energies differ by an offset…
We present a density-matrix embedding theory (DMET) study of the one-dimensional Hubbard-Holstein model, which is paradigmatic for the interplay of electron-electron and electron-phonon interactions. Analyzing the single-particle excitation…
We study the nonequilibrium Seebeck spin transport across metal-magnetic insulator interfaces. The conjugate-converted thermal-spin transport is assisted by the exchange interaction at the interface, between conduction electrons in the…
A Metal-Disordered Mott insulator-Metal heterostructure is studied at half-fiiling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we…
While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…
We calculate the one-particle density of states for the Mott-Hubbard insulating phase of the Hubbard model on a Bethe lattice in the limit of infinite coordination number. We employ the Kato-Takahashi perturbation theory around the…
Metal-insulator transitions are studied within a three-component Falicov-Kimball model which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model the…
The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…
A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2 channel based field-effect transistors. Approaches such as choosing metals with appropriate work functions and…
Employing extensive cellular dynamical mean-field theory (CDMFT) calculations with exact diagonalization impurity solver, we investigate the ground state phase diagrams and non-magnetic metal-insulator transitions of the half-filled Hubbard…
A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric…
The Gutzwiller wave function for a strongly correlated model can, if supplemented with a long-range Jastrow factor, provide a proper variational description of Mott insulators, so far unavailable. We demonstrate this concept in the…