Related papers: Single-electron quantum dot in Si/SiGe with integr…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a…
Spin qubits defined in carbon nanotube quantum dots are of considerable interest for encoding and manipulating quantum information because of the long electron spin coherence times expected. However, before carbon nanotubes can find…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
We consider a three-port single-level quantum dot system with one input and two output leads. Instead of considering an empty dot, we study the situations that two input electrons co-tunnel through the quantum dot occupied by one or two dot…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin…
We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate…
Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and to probe spin polarized electrons in conduction channels…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…
We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…
We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…