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We study the charge dynamics of the half-filled Hubbard model on the square lattice at zero temperature. We employ a slave-fermion formulation in which the charge degrees of freedom are represented by fermionic holons and doublons and the…
We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…
Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between the thermodynamically coexisting metal and Mott insulator. We show how to model the required slab geometry…
As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and…
The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…
We applied the time-resolved attosecond transient absorption spectroscopy to systematically investigate ultrafast optical responses of condensed matter systems. Under an intense pump pulse, absorption spectra indicate that the…
We study the ground-state properties of ultracold bosons in an optical lattice in the regime of strong interactions. The system is described by a non-standard Bose-Hubbard model with both occupation-dependent tunneling and on-site…
Under the influence of an external magnetic field and spin-changing collisions, the band insulator (BI) state of one-dimensional (1D) s-wave repulsively interacting 4-component fermions at half-filling transforms into Mott insulator (MI)…
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…
We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…
To understand the mechanism of Mott transitions in case of no magnetic influence, superfluid-insulator (Mott) transitions in the S=0 Bose Hubbard model at unit filling are studied on the square and triangular lattices, using a variational…
We investigate the Hall effect and the magnetoresistance of strongly correlated electron systems using the dynamical mean-field theory. We treat the low- and high-temperature limits analytically and explore some aspects of the…
The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…
The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…
The Hofstadter-Hubbard model captures the physics of strongly correlated electrons in an applied magnetic field, which is relevant to many recent experiments on Moir\'e materials. Few large-scale, numerically exact simulations exists for…
Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…
The Kitaev model, characterized by bond-dependent Ising spin interactions among spin-orbit entangled dipole moments in Mott insulators, offered a new approach to quantum spin liquids. Motivated by another type of bond-dependent interaction…
The Mott transition in a two-band Hubbard model involving subbands of different widths is studied as a function of temperature using dynamical mean field theory combined with exact diagonalization. The phase diagram is shown to exhibit two…
The underlying Fermi surface is a key concept for strongly-interacting electron models and has been introduced to generalize the usual notion of the Fermi surface to generic (superconducting or insulating) systems. By using improved…
We investigate a model for a Mott insulator in presence of a time-periodic modulated interaction and a coupling to a thermal reservoir. The combination of drive and dissipation leads to non-equilibrium steady states with a large number of…