Related papers: Percolative Effects on Noise in Pentacene Transist…
The interaction between the telegraph noise and background voltage fluctuations in the current induced dissipative state of high-Tc BiSrCaCuO thin films has been investigated. Experimental time records of the voltage drop across current…
Aluminum thin films are essential to the functionalities of electronic and quantum devices, where two-level systems (TLS) can degrade device performance. MBE-grown Al films may appeal to these applications due to their low TLS densities. We…
Single quantum dots and other materials exhibit irregular switching between on and off states; these on-off states follow power-law statistics giving rise to 1/f noise. We transfer this phenomenon (also referred to as on-off intermittency)…
We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of…
We have measured noise in thin-film superconducting coplanar waveguide resonators. This noise appears entirely as phase noise, equivalent to a jitter of the resonance frequency. In contrast, amplitude fluctuations are not observed at the…
It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…
We show that 1/f noise in a two-dimensional electron gas with hopping conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the…
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…
The flux noise spectrum and complex impedance for a 500 {\AA} thick YBCO film are measured and compared with predictions for two dimensional vortex fluctuations. It is verified that the complex impedance and the flux noise spectra are…
The performance of superconducting devices like qubits, SQUIDs, and particle detectors is often limited by finite coherence times and 1/f noise. Various types of slow fluctuators in the Josephson junctions and the passive parts of these…
Slow noise processes, with characteristic timescales ~1s, have been studied in planar superconducting resonators. A frequency locked loop is employed to track deviations of the resonator centre frequency with high precision and bandwidth.…
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…
High precision measurements of the complex sheet conductivity of superconducting Mo77Ge23 thin films have been made from 0.4 K through Tc. A sharp drop in the inverse sheet inductance, 1/L(T), is observed at a temperature, Tc, which lies…
The test masses in next-generation gravitational-wave interferometers may have a semiconductor substrate, most likely silicon. The stochastic motion of charge carriers within the semiconductor will cause random fluctuations in the…
The optical properties of pentacene (PEN) and perfluoropentacene(PFP) thin films on various SiO2 substrates were studied using variable angle spectroscopic ellipsometry. Structural characterization was performed using X-ray reflectivity and…
Fluctuations affect nanoporous transport in complex and intricate ways, making optimization of signal-to-noise in artificial designs challenging. Here we focus on the simplest nanopore system, where non-interacting particles diffuse through…
We present a new method to measure 1/f noise in Josephson quantum bits (qubits) that yields low-frequency spectra below 1Hz. Comparison of noise taken at positive and negative bias of a phase qubit shows the dominant noise source to be flux…
Current noise in nanoscale systems provides additional information beyond the electronic conductance. We report measurements at room temperature of the nonequilibrium "excess" noise in ensembles of atomic-scale gold junctions repeatedly…
This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…