Related papers: Percolative Effects on Noise in Pentacene Transist…
An oscillatory magnetic field dependence of the DC voltage is observed when a low-frequency current flows through superconducting Sn-Ge thin-film composites near the percolation threshold. The paper also studies the experimental…
Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition.…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance…
Low-frequency noise with the spectral density S(f)~1/f^g (f is the frequency and g~1) is a ubiquitous phenomenon, which hampers operation of many devices and circuits. A long-standing question of particular importance for electronics is…
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2…
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic…
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by…
We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude…
Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene…
We discovered an unprecedented magnitude of the 1/f noise near the Curie temperature Tc in low-Tc manganites. The scaling behavior of the 1/f noise and the resistance provides strong evidence of the percolation nature of the ferromagnetic…
The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of…
The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of semiconductors…
We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^{\alpha} character as seen in…
Ion transport through biological and solid-state nanochannels is known to be a highly noisy process. The power spectrum of current fluctuations is empirically known to scale like the inverse of frequency, following the long-standing yet…
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms,…
We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide…
We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A…