Related papers: Scale decomposition of molecular beam epitaxy
We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performed. Besides detailed models of reconstructed (001) surfaces…
We study statistical scale invariance and dynamic scaling in a simple solid-on-solid 2+1 - dimensional limited mobility discrete model of nonequilibrium surface growth, which we believe should describe the low temperature kinetic roughening…
We study, through large scale stochastic simulations using the noise reduction technique, a large number of simple nonequilibrium limited mobility solid-on-solid growth models. We find that d=2+1 dimensional surface growth in several noise…
We study unstable epitaxy on singular surfaces using continuum equations with a prescribed slope-dependent surface current. We derive scaling relations for the late stage of growth, where power law coarsening of the mound morphology is…
We study, using noise reduction techniques, layer by layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular…
A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the…
We present a theory for the damping of layer-by-layer growth oscillations in molecular beam epitaxy. The surface becomes rough on distances larger than a layer coherence length which is substantially larger than the diffusion length. The…
A discrete solid-on-solid model of epitaxial growth is introduced which, in a simple manner, takes into account the effect of an Ehrlich-Schwoebel barrier at step edges as well as the local relaxation of incoming particles. Furthermore a…
We introduce a new equation describing epitaxial growth processes. This equation is derived from a simple variational geometric principle and it has a straightforward interpretation in terms of continuum and microscopic physics. It is also…
A continuum one dimensional model of homoepitaxial growth under oblique incidence is investigated. We carried out numerical integration of a continuum equation incorporating a shadowing search algorithm. The interplay between the…
We propose a statistical tool to compare the scaling behaviour of turbulence in pairs of molecular cloud maps. Using artificial maps with well defined spatial properties, we calibrate the method and test its limitations to ultimately apply…
We apply the wavelet transform modulus maxima (WTMM) method to the analysis of simulated MBE-grown surfaces. In contrast to the structure function approach commonly used in the literature, this new method permits an investigation of the…
We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale…
The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound like…
The formation of three-dimensional structures during the epitaxial growth of films is associated to the reflection of diffusing particles in descending terraces due to the presence of the so-called Ehrlich-Schwoebel (ES) barrier. We…
A review is provided of our current theoretical understanding of dynamic scaling in nonequilibrium interface growth as, for example, in MBE growth under ultrahigh vacuum deposition conditions.
The energetically driven Ehrlich-Schwoebel (ES) barrier had been generally accepted as the primary cause of the growth instability in the form of quasi-regular mound-like structures observed on the surface of thin film grown via molecular…
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…
The growth of ballistic aggregates on deterministic fractal substrates is studied by means of numerical simulations. First, we attempt the description of the evolving interface of the aggregates by applying the well-established…
The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth…