Related papers: Suppression of electron spin relaxation in Mn-dope…
Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high…
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors.…
We observe a strong dependence of the exciton spin relaxation in CdTe quantum dots on the average dot size and the depth of the confining potential. For the excitons confined to the as-grown CdTe quantum dots we find the spin relaxation…
We use time-resolved detection of the Hanle effect and polarized photoluminescence with dark intervals to investigate the buildup and decay of the spin polarization of nuclei interacting with donor-bound electrons in $n$-doped GaAs. Strong…
We present muon spin lattice relaxation measurements in the V15 spin 1/2 molecular nano-magnet. We find that the relaxation rate in low magnetic fields (<5 kG) is temperature independent below ~10 K, implying that the molecular spin is…
It is proposed that the observed small (100 ps) spin relaxation time in graphene is due to resonant scattering by local magnetic moments. At resonances, magnetic moments behave as spin hot spots: the spin-flip scattering rates are as large…
The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…
The time dependence of muon spin relaxation has been measured in high purity aluminum and silver samples in a longitudinal 2 T magnetic field at room temperature, using time-differential \musr. For times greater than 10 ns, the shape fits…
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of…
The spin dynamics of localized donor-bound electrons interacting with the nuclear spin ensemble in $n$-doped GaAs epilayers is studied using nuclear spin polarization by light with modulated circular polarization. We show that the observed…
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in…
The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions different spin relaxation rates can be…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques…
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The…
We consider the problem of spin relaxation in a two-dimensional electron gas (2DEG) in a perpendicular magnetic field. We assume that the spin relaxation is induced by the Rashba spin-orbit (SO) interaction, which appears due to the…
The low-energy spin fluctuations in the electron-doped Pr$_{1-x}$LaCe$_{x}$CuO$_{4}$ have been investigated over a wide concentration range of 0.07$\leqslant$ $x$ $\leqslant$0.18 that spans from the antiferromagnetic and non-superconducting…
The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR)…
We investigate electron spin dynamics in narrow two-dimensional n-InGaAs channels as a function of the channel width. The spin relaxation times increase with decreasing channel width, in accordance with recent theoretical predictions based…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…