Related papers: Interaction of ultrashort X-ray pulses with B4C, S…
We investigate photoinization, energy deposition, plasma formation and the ultrafast optical breakdown in crystalline silicon irradiated by intense near-infrared laser pulses with pulse duration $\tau \le $ 100 fs. The occurrence of…
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A…
The employment of ultrashort laser sources at the mid-IR spectral region for transparent materials is designed to open new routes for laser patterning and a wealth of exciting applications in optics and photonics. To elucidate the material…
We study the interaction of intense ultrashort laser pulses with cryogenic He jets using 2d/3v relativistic Particle-in-Cell simulations (XOOPIC). Of particular interest are laser intensities $(10^{15}-10^{20})$ W/cm$^2$, pulse lengths $\le…
Saturable absorption is a nonlinear effect where a material's ability to absorb light is frustrated due to a high influx of photons and the creation of electron vacancies. Experimentally induced saturable absorption in copper revealed a…
The absorption length, $\lambda_{abs}$, of light with wavelengths between 0.95 and 1.30$~\mu$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been…
Surface roughness plays a critical role in ultrashort pulse laser ablation, particularly for industrial applications using burst mode operations, multi-pulse laser processing, and the generation of laser-induced periodic surface structures.…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
X-ray diffraction of silicon irradiated with tightly focused femtosecond x-ray pulses (photon energy: 11.5 keV, pulse duration: 6 fs) was measured at various x-ray intensities up to $4.6\times10^{19}$ W/cm$^2$. The measurement reveals that…
Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick…
We provide measurements of ablation of four post-transition and transition metals (aluminum, copper, nickel and tungsten) irradiated by single 800 nm laser pulses, in ultrashort regime from 100 fs pulse duration down to 15 fs covering a…
In this study, we investigate the W-on-Si interface and the effect of adding a B4C interlayer at such interface, using low-energy ion scattering (LEIS) spectroscopy, X-ray reflectivity, X-ray diffraction, and transmission electron…
Recent progress in the development of high-power mid-IR laser sources and the exciting laser driven physical phenomena associated with the irradiation of solids via ultrashort laser pulses in that spectral region are aimed to potentially…
Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…
Diffraction-before-destruction imaging with single ultrashort X-ray pulses has the potential to visualise non-equilibrium processes, such as chemical reactions, at the nanoscale with sub-femtosecond resolution in the native environment…
Femtosecond laser modification of fused silica enables precise surface tailoring for the fabrication of micro-optical components such as microlenses and diffractive elements. However, the process is governed by laser-matter interactions…
Laser machining and modification of black-Si (b-Si) by femtosecond laser Gaussian (G-) and Gauss-Bessel (GB-) beams are compared at a wavelength of 1030 nm. The GB-beam was generated using a diffractive axicon lens and 10x demagnification…
The optical response of nickel is studied in a wide range of laser fluence, below and above the ablation threshold, by selfreflectivity measurements of ultrashort 800nm single laser pulses. At the ablation threshold, the reflectivity…
The damage growth and surface modifications in Si(100), induced by 25 keV Si$_5^-$ cluster ions, as a function of fluence, $\phi$, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry…