Related papers: Pauli spin-blockade in an InAs nanowire double qua…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
Spin-dependent transport through a two-level quantum dot in the sequential tunneling regime is analyzed theoretically by means of a real-time diagrammatic technique. It is shown that the current, tunnel magnetoresistance, and shot noise…
We develop a theoretical description of transport through quantum dots connected to reservoirs via spin-polarized ballistic contacts. Rate equations account for spin accumulation inside the dot, electron-electron interactions, and…
A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is…
In this letter, we present fast readout of Pauli spin blockade phenomena and interdot coupling tunability in a silicon double quantum dot (DQD) fabricated using industry-compatible processes. The interdot couplings are tuned with a second…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We consider theoretically a magnetic impurity spin driven by polarized electrons tunneling through a double quantum dot system. Spin blockade effect and spin conservation in the system make the magnetic impurity sufficiently interact with…
Both quantum transport measurements in the Pauli blockade regime and microwave cavity transmission measurements are important tools for spin-qubit readout and characterization. Based on a generalized input-output theory we derive a…
The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…
The paper proposes the method to analyze the internal dynamics of nanoscopic systems by periodic modulation of the electrochemical potentials of the attached leads and measuring the time-averaged current. The idea is presented using the…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires…
We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…
We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…
We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…
Entanglement, being at the heart of the Einstein-Podolsky-Rosen (EPR) paradox, is a necessary ingredient in processing quantum information. Cooper pairs in superconductors - being composites of two fully entangled electrons - can be split…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We consider the full driven quantum dynamics of a qubit realized as spin of electron in a one-dimensional double quantum dot with spin-orbit coupling. The driving perturbation is taken in the form of a single half-period pulse of electric…