Related papers: Ab initio Study of Misfit Dislocations at the SiC/…
Elasticity theory is an important component of continuum mechanics and has had widely spread applications in science and engineering. Material interfaces are ubiquity in nature and man-made devices, and often give rise to discontinuous…
In an attempt to provide an efficient method for line disturbance identification in complex networks of diffusively coupled agents, we recently proposed to leverage the frequency mismatch. The frequency mismatch filters out the intricate…
We consider the quasi-static propagation of a Mode III crack along the interface in a bimaterial plane containing a finite array of small line defects (microcracks and rigid line inclusions). The microdefects are arranged to form a channel…
SiC particle-reinforced Al matrix composites exhibit high strength, high wear resistance, and excellent high-temperature performance, but can also have low plasticity and fracture toughness, which limits their use in structural…
We study the electronic properties of the glide set of dislocations in diamond from first principles using hybrid exchange correlation functionals and find that the atomic-scale dislocation core states give rise to a prototypical…
A fundamental aspect in performance engineering of wireless networks is optimizing the set of links that can be concurrently activated to meet given signal-to-interference-and-noise ratio (SINR) thresholds. The solution of this…
Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to nongaussian tails in the distribution of…
We study dislocation networks in the plane using the vectorial phase-field model introduced by Ortiz and coworkers, in the limit of small lattice spacing. We show that, in a scaling regime where the total length of the dislocations is…
Silicon has long been synonymous with semiconductor technology. This unique role is due largely to the remarkable properties of the Si-SiO_2 interface, especially the (001)-oriented interface used in most devices. Although Si is crystalline…
This paper considers a steady-state crack propagating along an interface between dissimilar orthotropic materials under an asymmetric load. Although most of the known results so far deal with symmetric loading, it has been shown recently…
Dislocations are a central concept in materials science, which dictate the plastic deformation and damage evolution in materials. Layered materials such as graphite admit two general types of interlayer dislocations: basal and prismatic…
The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface…
A new solution for general half-plane contact problems subject to a constant normal load together with alternating shear loads and tension in the steady state is presented. The method uses a formulation where a displacement correction is…
A system of $n$ screw dislocations in an isotropic crystal undergoing antiplane shear is studied in the framework of linear elasticity. Imposing a suitable boundary condition for the strain, namely requesting the non-vanishing of its…
We study the effect of interface disorder on the spin-dependent interface resistances of Co/Cu, Fe/Cr and Au/Ag multilayers using a newly developed method for calculating transmission matrices from first-principles. The efficient…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Dislocations can climb out of their glide plane by absorbing (or emitting) point defects (vacancies and self-interstitial atoms (SIAs)). In contrast with conservative glide motion, climb relies on the point defects' thermal diffusion and…
We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the…
We investigate theoretically spin-resolved transport, spin filtering, and nonreciprocal effects in an Altermagnet/Ising superconductor (AM/ISC) junction with a spin-active interface. Using a modified Bogoliubov-de Gennes framework within…
Plasticity in body-centred cubic (BCC) metals, including dislocation interactions at grain boundaries, is much less understood than in face-centred cubic (FCC) metals. At low temperatures additional resistance to dislocation motion due to…