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Related papers: Multi-phonon Raman scattering in GaN nanowires

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Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe$_2$ at different laser excitation energies from 2.33 eV…

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 K. M. Borysenko , J. T. Mullen , E. A. Barry , S. Paul , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

Electronic Raman scattering and optical phonon self-energies are studied on single crystals of $LuB_{12}$ with different isotopic composition in the temperature region 10-650K and at pressures up to 10 GPa. The shape and energy position of…

Materials Science · Physics 2016-08-09 Yu. S. Ponosov , A. A. Makhnev , S. V. Streltsov , V. B. Filipov , N. Yu. Shitsevalova

Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on…

We report on Raman scattering measurements of single crystalline La$_{1-x}$Sr$_x$MnO$_3$ ($x$=0, 0.06, 0.09 and 0.125), focusing on the high frequency regime. We observe multi-phonon scattering processes up to fourth-order which show…

We present a Raman scattering study of Ca$_2$RuO$_4$, in which we investigate the temperature-dependence of the lattice dynamics and the electron-phonon interaction below the metal-insulator transition temperature ({\it T}$_{\rm MI}$).…

Strongly Correlated Electrons · Physics 2009-11-11 H. Rho , S. L. Cooper , S. Nakatsuji , H. Fukazawa , Y. Maeno

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h and E1(TO) phonon modes of the…

Mesoscale and Nanoscale Physics · Physics 2013-03-26 E. G. Gadret , T. Chiaramonte , M. A. Cotta , F. Iikawa , M. M. de Lima , A. Cantarero , J. R. Madureira

For many materials, Raman spectra are intricately structured and provide valuable information about compositional stoichiometry and crystal quality. Here we use density-functional theory calculations, mass approximation, and the Raman…

Materials Science · Physics 2024-09-04 Nima Ghafari Cherati , I. Abdolhosseini Sarsari , Arsalan Hashemi , Tapio Ala-Nissila

We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm-1 to 110 cm-1) is…

We review the different results obtained in the last decade in the field of Raman scattering of graphene based systems, with an applied magnetic field. Electronic properties of graphene based systems with an applied magnetic field will…

Mesoscale and Nanoscale Physics · Physics 2018-02-14 C. Faugeras , M. Orlita , M. Potemski

An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer…

Mesoscale and Nanoscale Physics · Physics 2010-03-23 M. Bruna , S. Borini

In the present paper, we utilize the coupled-oscillator model describing the hybridization of optical phonons in touching and/or overlapping particles in order to study the Raman spectra of nanoparticles organized into various types of…

Mesoscale and Nanoscale Physics · Physics 2023-12-01 S. V. Koniakhin , O. I. Utesov , A. G. Yashenkin

In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition…

Strongly Correlated Electrons · Physics 2015-06-25 M. J. Konstantinovic , Z. V. Popovic , T. Ruf , M. Cardona , A. N. Vasil'ev , M. Isobe , Y. Ueda

Structural modifications in InP(111) due to 1.5 MeV implantation of Sb have been characterized using first order and second order Raman spectroscopy. With both Longitudinal Optical (LO) and Transverse Optical (TO) modes allowed for…

Materials Science · Physics 2007-08-21 D. Paramanik , S. Varma

We study theoretically and experimentally the dependence of the electron-phonon interaction in Na$_x$CoO$_2$ on the sodium concentration $x$. For the two oxygen phonon modes found in Raman experiments, $A_{1g}$ and $E_{1g}$, we calculate…

Strongly Correlated Electrons · Physics 2009-11-13 A. Donkov , M. M. Korshunov , I. Eremin , P. Lemmens , V. Gnezdilov , F. C. Chou , C. T. Lin

The Raman selection rules arise from the crystal symmetry and then determine the Raman activity and polarization of scattered phonon modes. However, these selection rules can be broken in resonant process due to the strong electron-phonon…

Materials Science · Physics 2021-02-09 Qing-Hai Tan , Kai-Xuan Xu , Yu-Jia Sun , Xue-Lu Liu , Yuan-Fei Gao , Shu-Liang Ren , Ping-Heng Tan , Jun Zhang

We derive within the dielectric-continuum model an integral equation that defines interface and confined polar optical-phonon modes in nanocrystals with wurtzite crystal structure. It is demonstrated theoretically, that while the frequency…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Vladimir A. Fonoberov , Alexander A. Balandin

We report the first systematic measurements of the Raman scattering by electrons in elemental metals of Al, Mo, Nb, Os, Pb, Re, Ta, Ti, V, W and metallic compound La$B_6$. Experimental spectra are modelled on the base of the band…

Strongly Correlated Electrons · Physics 2012-08-09 Yu. S. Ponosov , S. V. Streltsov

Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings…

Materials Science · Physics 2015-05-13 C. Faugeras , M. Amado , P. Kossacki , M. Orlita , M. Sprinkle , C. Berger , W. A. de Heer , M. Potemski

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistors. The model is able to resolve these peculiarities, and…

Materials Science · Physics 2010-08-09 Debdeep Jena , Siddharth Rajan