Related papers: Low Temperature Investigation of Electrical Conduc…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
The complex electric modulus and the ac conductivity of carbon nanoonion/polyaniline composites were studied from 1 mHz to 1 MHz at isothermal conditions ranging from 15 K to room temperature. The temperature dependence of the electric…
The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on…
The thermal conductance of straight and corrugated monocrystalline silicon nanowires has been measured between 0.3 K and 5 K. The difference in the thermal transport between corrugated nanowires and straight ones demonstrates a strong…
The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…
In nanostructures phonon transport behaviour is distinctly different to transport in bulk materials such that materials with ultra low thermal conductivities and enhanced thermoelectric performance can be realized. Low thermal…
We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$),…
We have investigated the electrical conduction processes in as-grown and thermally cycled ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature range 20--500 K. In the case of ZnO single crystal between…
Magnetic nanowires are critical components in fields such as data storage and spintronics, where precise control of their magnetic properties is essential for device optimization. In particular, the behavior of isolated nanowires is often…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
We report on the low temperature tunnel magnetoresistance (MR) in quasi one-dimensional (1D) nanofibers made of conjugated polymers. The MR voltage bias dependence reveals an enhancement (at low biases) and the oscillatory behavior at…
We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge…
Non-diffusive thermal transport has gained extensive research interest recently due to its important implications on fundamental understanding of material phonon mean free path distributions and many nanoscale energy applications. In this…
We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
In this paper we present the temperature-dependent emissivity of a silicon sample, estimated from its cool-down curve in a constant low temperature environment ($\approx$ 82K). The emissivity value follow a linear dependency in the 120-260…
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…