Related papers: Current-voltage characteristics of semiconductor/f…
The steady current-voltage characteristics of ferromagnet-silicon-ferromagnet channels with tunable emitter and collector polarizations are investigated in the presence of spin blockade generalizing the model developed by Pershin Yu V and…
We study theoretically extraction of spin-polarized electrons at nonmagnetic semiconductor/ferromagnet junctions. The outflow of majority spin electrons from the semiconductor into the ferromagnet leaves a cloud of minority spin electrons…
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…
We develop a theory for the current-voltage characteristics of diffusive superconductor-normal metal-superconductor Josephson junctions with resistive interfaces and the distance between the electrodes smaller than the superconducting…
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…
We develop a theory of current-voltage (I-U) characteristics for superconductor-normal metal-superconductor (SNS) junctions. At small voltages and sufficiently low temperatures the I-U characteristics of the junction is controlled by the…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…
Phenomenological approach is developed in the theory of spin-valve type ferromagnetic junctions to describe exchange switching by current flowing perpendicular to interfaces. Forward and backward current switching effects are described and…
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source.…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
The dynamics of a single spin embedded in a the tunnel junction between ferromagnetic contacts is strongly affected by the exchange coupling to the tunneling electrons. Moment reversal of the local spin induced by the bias voltage across…
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs…
Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…
We study the magnetization dynamics in a ferromagnet-insulator-superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and…
We study the current-voltage characteristics of a superconducting junction with particle losses at the contacts. We adopt the Keldysh formalism to compute the steady-state current for varying transmission of the contact. In the low…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
Spin-split superconductors exhibit an electron-hole asymmetric spin-resolved density of states, but the symmetry is restored upon averaging over spin. On the other hand, asymmetry appears again in tunneling junctions of spin-split…
We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…