Related papers: Intrinsic tunneling in phase separated manganites
Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of ions in solids to be monitored and analyzed with high…
Half a century ago, Mott noted that tuning the carrier density of a semimetal towards zero produces an insulating state in which electrons and holes form bound pairs. It was later argued that such pairing persists even if a semiconducting…
We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $Ba_{2}LaNbO_{6}$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS…
We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at…
Recent computational studies of models for manganese oxides have revealed a rich phase diagram, not anticipated in early calculations in this context performed in the 1950's and 60's. In particular, the transition between the…
In Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$, pressure induces reentrant magnetic and electronic state changes in the range 1 atm to $\sim$ 6 GPa. The metal-insulator and magnetic transition temperatures coincide from $\sim$1 to 5 GPa, decouple outside…
Ultrafast optical excitations allow creating new metastable and hidden states in quantum materials. However, the fundamental material properties required to support new emergent order are largely unknown. Here we show for two colossal…
Angle-resolved photoemission spectroscopy data for the bilayer manganite La1.2Sr1.8Mn2O7 show that, upon lowering the temperature below the Curie point, a coherent polaronic metallic groundstate emerges very rapidly with well defined…
In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…
Electrical magnetoresistance and tunnel diode oscillator measurements were performed under external magnetic fields up to 41 T applied along the crystallographic b-axis (hard axis) of UTe$_2$ as a function of temperature and applied…
It is shown that a sufficiently strong external electric field causes a decrease in the transition temperature of ferroelectric, antiferroelectric, and metal-insulator transitions. The temperature dependence of the critical electric field…
Identifying intrinsic low-dimensional ferromagnets with high transition temperature and electrically tunable magnetism is crucial for the development of miniaturized spintronics and magnetoelectrics. Recently long-range 2D ferromagnetism…
Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
Magnetoresistance (MR) and magnetization (d.c and a.c) measurements have been carried out on the manganites, (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15), in the temperature range of 5K-320K. At 5K, an unusually large MR of almost 98% is…
Magnetic, linear thermal expansion (LTE), anisotropic ($\lambda_t$) and volume ($\omega $) magnetostriction properties of Pr$_{0.5}$Sr$_{0.5}$MnO$_3$ were investigated. The LTE decreases smoothly from 300 K without a clear anomaly either…
A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…
We study the transition at T=0 from a ferromagnetic insulating to a ferromagnetic metallic phase in manganites as a function of hole doping using an effective low-energy model Hamiltonian proposed by us recently. The model incorporates the…
The macroscopic quantum tunneling of a planar domain wall in a ferromagnetic metal is studied by use of an instanton method. Based on the Hubbard model, the effective action of the magnetization is derived within the assumption of slow…