Related papers: Size-Dependence of the Wavefunction of Self-Assemb…
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically…
The spontaneous emission rate of excitons strongly confined in quantum dots is proportional to the overlap integral of electron and hole envelope wave functions. A common and intuitive interpretation of this result is that the spontaneous…
Quantum dots play a promising role in the development of novel optical and biosensing devices. In this study, we investigated steady-state and time-dependent luminescence properties of InGaP/ZnS core/shell colloidal quantum dots in a…
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with…
We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information…
We have employed time-dependent local-spin density functional theory to analyze the multipole spin and charge density excitations in GaAs-AlGaAs quantum dots. The on-plane transferred momentum degree of freedom has been taken into account,…
We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another,…
Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots.…
We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The…
Measured and calculated results are presented on the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with…
We derive a rigorous theory of the interaction between photons and spatially extended excitons confined in quantum dots in inhomogeneous photonic materials. We show that, beyond the dipole approximation, the radiative decay rate is…
The electronic structure of nanoscale moieties (such as molecules and quantum dots) governs the properties and performance of the bottom-up fabricated devices based on their assemblies. Accordingly, simple and faster experimental methods…
We investigate the measurements of two-state quantum systems (qubits) at finite temperatures using a resonant harmonic oscillator as a quantum probe. The reduced density matrix and oscillator correlators are calculated by a scheme combining…
Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wavefunctions is probed by investigating the dependence of these energies on…
The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal…
We investigated the entanglement in a diluted magnetic semiconductor quantum dot, crucial for quantum technologies. Despite their potential, these systems exhibit low extraction rates. We explore self-assembled InGaAs quantum dots, focusing…