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The extrinsic size effect in Piezoresponse Force Microscopy of ferroelectric and piezoelectric thin films on non-polar dielectric substrate is analyzed. Analytical expressions for effective piezoresponse, object transfer function…

Materials Science · Physics 2009-11-13 Anna N. Morozovska , Sergei V. Svechnikov , Eugene A. Eliseev , Sergei V. Kalinin

Piezoresponse force microscopy (PFM) has been extensively utilized as a versatile and an indispensable tool to understand and analyze nanoscale ferro- /piezoelectric properties by detecting the local electromechanical response on a sample…

Applied Physics · Physics 2020-04-29 Huimin Qiao , Owoong Kwon , Yunseok Kim

Piezoresponse Force Microscopy (PFM) has emerged as a primary tool for imaging, domain engineering, and switching spectroscopy on ferroelectric materials. Quantitative interpretation of PFM data including measurements of the intrinsic width…

Materials Science · Physics 2007-05-23 Anna N. Morozovska , Svetlana L. Bravina , Eugene A. Eliseev , Sergei V. Kalinin

Renewed interest has been witnessed in utilizing the piezoelectric response of $PbZr_{0.52}Ti_{0.48}O_{3}$ (PZT) films on glass substrates for applications such as data storage and adaptive optics. Accordingly, new methodologies are being…

Piezoresponse force microscopy (PFM) is a powerful tool for probing nanometer-scale ferroelectric and piezoelectric properties. Hysteretic switching of the phase and amplitude of the PFM response are believed to be the hallmark of…

Materials Science · Physics 2016-10-04 Shilpa Sanwlani , Mohammad Balal , Shubhra Jyotsna , Goutam Sheet

To achieve quantitative interpretation of Piezoresponse Force Microscopy (PFM), including resolution limits, tip bias- and strain-induced phenomena and spectroscopy, analytical representations for tip-induced electroelastic fields inside…

Materials Science · Physics 2009-11-10 Sergei V. Kalinin , Edgar Karapetian , Mark Kachanov

We calculate the pyrocoefficient, static dielectric susceptibility profiles and its thickness dependence of ferroelectric thin films. Also, the temperature dependences of above quantities have been calculated. For the calculations we use…

Materials Science · Physics 2007-05-23 M. D. Glinchuk , E. A. Eliseev , V. A. Stephanovich

Piezoresponse Force Spectroscopy (PFS) has emerged as a powerful technique for probing highly localized switching behavior and the role of microstructure and defects on switching. The application of a dc bias to a scanning probe microscope…

Coupling between electrical and mechanical phenomena is a near-universal characteristic of inorganic and biological systems alike, with examples ranging from ferroelectric perovskites to electromotor proteins in cellular membranes.…

Materials Science · Physics 2016-11-15 Sergei V. Kalinin , Andrei Rar , Stephen Jesse

The resistance of chemically synthesized polypyrrole (PPy) thin films is investigated as a function of the pressure of various gases as well as of the film thickness. A physical, piezoresistive response is found to coexist with a chemical…

Materials Science · Physics 2010-05-06 S. Barnoss , H. Shanak , C. Bof Bufon , T. Heinzel

We developed a theoretical model for the calculation of the main characteristics of pyroelectric response of pyroactive multilayer structures, which are basic elements of modern pyroelectric detectors of radiation and other transducers. In…

The image formation mechanism in Piezoresponse Force Microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses, and derive the corresponding…

Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction…

The effective piezoelectric coefficients of twin walls in tetragonal ferroelectric are calculated in the framework of decoupling approximation and Landau-Ginzburg-Devonshire theory allowing for polarization gradient terms, electrostriction…

Materials Science · Physics 2015-06-12 Anna N. Morozovska , Eugene A. Eliseev , Olexander V. Varenyk , Sergei V. Kalinin

In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed.…

Materials Science · Physics 2015-05-19 J. Guyonnet , H. Bea , P. Paruch

The pyroelectric effect in ferroelectric thin films is typically composed of different contributions, which are difficult to disentangle. In addition, clamping to the substrate interface plays an important role. We studied epitaxial…

Materials Science · Physics 2025-08-26 D. Schmidt , J. Wawra , D. Hensel , M. Brede , R. Hühne , P. Gaal

Given that a ferroelectric domain is generally a three dimensional entity, the determination of its area as well as its depth is mandatory for full characterization. Piezoresponse force microscopy (PFM) is known for its ability to map the…

Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we…

Materials Science · Physics 2026-03-02 Yu Liu , Yi-Xiu Chen , Haotong Liang , Ichiro Takeuchi , Sergei V. Kalinin

Piezoresponse Force Microscopy is a powerful but delicate nanoscale technique that measures the mechanical response resulting from the application of a highly localized electric field. Though mechanical response is normally due to…

Materials Science · Physics 2016-10-07 Andres Gomez , Mariona Coll , Teresa Puig , Xavier Obradors

The comparative investigation of pyroelectric response modulation frequency dependences of structures of "polar active film-Si substrate" type based on PZT and PVDF and of structures of "polar active film - buffer layer - Si substrate" type…

Materials Science · Physics 2007-05-23 S. Bravina , N. Morozovsky , E. A. Eliseev , E. Cattan , D. Remiens , A. Grosman
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