Related papers: Spin Diode Based on Fe/MgO Double Tunnel Junction

The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with…

The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as…

Nonreciprocal dissipationless transport has long been sought for applications in superconducting technologies. Recently, it has been implemented by the so called superconducting diode effect. Such effect arises from an imbalance in critical…

We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat…

Ferrimagnet (FiM), (FeCo)1-xGdx, attracts research attention due to its ultrafast magnetic dynamics and finite net magnetization. Incorporating FiM into the magnetic tunnel junction will be beneficial to further improve the writing speed of…

We investigate spin dependent transport in hybrid superconductor(S)--normal-metal(N)--ferromagnet(F) structures under conditions of proximity effect. We demonstrate the feasibility of the absolute spin-valve effect for a certain interval of…

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…

In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of…

It is shown that, upon the electron quantum transport via the nanostructure containing a spin dimer, the spin-flip processes caused by the s-f exchange interaction between electron and dimer spins lead to the Fano resonance effects. An…

We propose a nanoscale device consisting of a double quantum dot with a full exchange and pair hopping interaction. In this design, the current can only flow through the upper dot, but is sensitive to the spin state of the lower dot. The…

The superconducting diode effect (SDE), where zero-resistance states appear nonreciprocally during current injection, is receiving tremendous interest in both fundamental and applied physics because the SDE is a novel manifestation of…

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through…

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…

Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…