Related papers: High precision quantum control of single donor spi…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
Nuclear spins near group-IV defects in diamond are promising candidates for quantum memories in quantum network applications. Here, we demonstrate high-fidelity control of a single $^{13}$C nuclear spin coupled to a tin-vacancy (SnV) center…
The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear…
The long coherence time of a single nitrogen vacancy (NV) center spin in diamond is a crucial advantage for implementing quantum information processing. However, the realization of strong coupling between single NV spins is challenging.…
We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…
The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…
Silicon-vacancy and tin-vacancy defects in diamond are of interest as alternative qubits to the NV center due to their superior optical properties. While the availability of optical transitions in these defects is one of their assets,…
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
Understanding the quantum dynamics of spin defects and their coherence properties requires accurate modeling of spin-spin interaction in solids and molecules, for example by using spin Hamiltonians with parameters obtained from…
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these…
Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunability, and are readily available few-electron systems. To be…
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a…
We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by…
Lifetime limited optical excitation lines of single nitrogen vacancy (NV) defect centers in diamond have been observed at liquid helium temperature. They display unprecedented spectral stability over many seconds and excitation cycles.…
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…
The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in…