Related papers: Impurity Scattering and Mott's Formula in Graphene
We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…
The quadratic low-temperature dependence of resistance in ordinary metals is determined by the momentum relaxation due to electron-electron scattering in the presence Umklapp processes and scattering on impurities. In metals without…
We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…
A general theory is developed to describe graphene with arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the minimal conductivity of…
We study Friedel oscillations in a two-dimensional non-interacting electron gas and in a monolayer graphene in the presence of a single impurity. The potential generated by the impurity is modeled using a non-Coulomb interaction ($\sim…
It is known that electron scattering by surface polar phonons (SPPs) of the substrate reduces their mobility in supported graphene. However, there is no experimental evidence for contribution of drag of electrons by SPP to thermoelectric…
Using bosonization and path integral methods, we study general low temperature behavior of non-magnetic and magnetic impurity scattering in Tomonaga-Luttinger liquid, and calculate electron Green function for a general backward scattering…
Using a generalized T-matrix description which, in principle, exactly includes Coulomb correlations and potential scattering events, resonant and bound impurity states are discussed. Like in the non-interacting case, the effects of the…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
Thermoelectric effects allow the generation of electrical power from waste heat and the electrical control of cooling and heating. Remarkably, these effects are also highly sensitive to the asymmetry in the density of states around the…
The cooling of hot electrons in graphene is the critical process underlying the operation of exciting new graphene-based optoelectronic and plasmonic devices, but the nature of this cooling is controversial. We extract the hot electron…
A theoretical study is presented on the scattering of graphene surface plasmons by defects in the graphene sheet they propagate in. These defects can be either natural (as domain boundaries, ripples and cracks, among others) or induced by…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
We study the low-temperature thermodynamics of a spin-S magnetic impurity coupled to m degenerate bands of interacting electrons in one dimension. By exploiting boundary conformal field theory techniques, we derive exact results for the…
We revisit the problem of bound states in graphene under the influence of point electric monopole and dipole impurity potentials extended to the case in which the membrane of this material is uniformly and uniaxially strained, which leads…
The static conductivity of the dilute magnetic semiconductor GaMnAs is calculated using the memory function formalism and time-dependent density-functional theory to account for impurity scattering and to treat Hartree and exchange…
We theoretically investigate how quasi-particle properties of an attractive Fermi polaron are affected by nonzero temperature and finite impurity concentration. By applying both non-self-consistent and self-consistent many-body $T$-matrix…
A theory for the effect of impurity scattering on electronic Raman scattering in unconventional superconductors is presented. The impurity dependence of the the spectra can be used to to distinguish between conventional (anisotropic…
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…
It is shown that the Hamiltonian for a quantum magnetic impurity on the surface of a topological insulator can be mapped to the conventional pseudo-gap Anderson impurity model, albeit with the combinations of continuum states which…