Related papers: CdZnTe:Cl crystals for X-ray computer tomography d…
F-substituted NdOBiS2 superconducting single crystals were grown using CsCl/KCl flux. This is the first example of the single-crystal growth of a BiS2-based superconductor. The obtained single crystals had a plate-like shape with a size of…
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline…
Nuclear and high energy physics research has a need for new, high performance scintillators with high light yields; high densities, fast decay times, and are radiation hard. In this paper we present crystal growth and results from 16-mm…
A 500 kg CsI(Tl) scintillating crystal detector is under construction for the studies of low-energy neutrino physics. The requirements, design, realization and the performance of the associated electronics, trigger, data acquisition and…
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper…
Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…
A cryogenic detector system based on two 3.3 kg high-purity CsI crystals was developed and characterized at approximately 95 K. Each wedge-shaped crystal was coupled to dual-ended 3-inch photomultiplier tubes (PMTs) for scintillation…
We report successful growth of flux free large single crystals of superconducting FeSe1/2Te1/2 with typical dimensions of up to few cm. The AC and DC magnetic measurements revealed the superconducting transition temperature (Tc) value of…
Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…
We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are…
Purpose: Developing photon-counting CT detectors requires understanding the impact of parameters such as converter material, absorption length and pixel size. We apply a novel linear-systems framework, incorporating spatial and energy…
We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen…
CdZnTe (CZT) is a wide bandgap II-VI semiconductor developed for the spectroscopic detection of X-rays and {\gamma}-rays at room temperature. The Swift Burst Alert Telescope is using an 5240 cm2 array of 2 mm thick CZT detectors for the…
The structural characterization of sol-gel based nano crystalline ZnO material is being reported as we observe several previously unreported structural aspects following a sequence of annealing stages. As-grown samples were characterised by…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a…
A new approach to grow FeSe1-xTex single crystals with optical zone-melting technique was successfully employed. Crystals with actual composition 0.4 < x < 1.0 all show high crystallinity with no phase separation. The ability to visually…
NaI(Tl) crystals are used as particle detectors in a variety of rare-event search experiments because of their superb light-emission quality. The crystal light yield is generally high, above 10 photoelectrons per keV, and its emission…
In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 {\deg}C…
Indium-doped semiconductor crystals CdZnTeSe with several different compositions of raw materials were grown via the vertical Bridgman method under high-pressure argon. For the first time, these crystals were obtained via a combined method…
ZnGeN2 and other heterovalent ternary semiconductors have important potential applications in optoelectronics, but ordering of the cation sublattice, which can affect the band gap, lattice parameters, and phonons, is not yet well…