Related papers: Energetics of positron states trapped at vacancies…
Mijnarends et al. [J. Phys. Condens. Matter {\bf 10}, 10383 (1998)] contested the best existing calculations of positron annihilation rates in jellium and crystal lattices, pointing in this way at deficiencies of existing theories of…
This chapter reviews the following items: 1. Energy deposition and track structure of fast positrons: ionization slowing down, number of ion-electron pairs, typical sizes, thermalization, electrostatic interaction between e+ and its blob,…
Understanding the dynamics of positron cooling in gases, including the fraction of positrons surviving to thermalisation, is critical for accurate interpretation of positron lifetime spectra, for the development of efficient positron…
Halide perovskites have emerged in the last decade as a new important class of semiconductors for a variety of optoelectronic applications. A lot of previous studies were thus devoted to the characterisation of their point defects. Positron…
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation…
We consider electron self-trapping due to its interaction with order-parameter fluuctuations at the second-order phase-transition or critical point (for example, at the Curie temperature in magnetic or ferroelectric semiconductors). Using…
The decoherence in trapped ion induced by coupling the ion to the engineered reservoir is studied in this paper. The engineered reservoir is simulated by random variations in the trap frequency, and the trapped ion is treated as a two-level…
The performance of many superconducting devices is degraded in presence of non-equilibrium quasiparticles in the superconducting part. One promising approach towards their evacuation is the use of normal-metal quasiparticle traps, where…
A completely analytic description is given of the motion of a trapped ion which is in either an even or an odd coherent state. Comparison to recent theoretical and experimental work is made.
The aim of this work is to identify the mechanisms responsible for very large rates and other peculiarities observed in low-energy positron annihilation on molecules. The two mechanisms considered are: (i) Direct annihilation of the…
Interaction between hydrogen (H) and metals is central to many materials problems of scientific and technological importance. Chief among them is the development of H storage and H-resistant materials. H segregation or trapping at lattice…
We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron…
Quantum Monte Carlo calculations of the relaxation energy, pair-correlation function, and annihilating-pair momentum density are presented for a positron immersed in a homogeneous electron gas. We find smaller relaxation energies and…
In this work we present ab initio calculations of the formation energies and stability of different types of multi-vacancies in carbon nanotubes. We demonstrate that, as in the case of graphene, the reconstruction of the defects has drastic…
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and…
Charge trapping and formation of polarons is a pervasive phenomenon in transition metal oxide compounds, in particular at the surface, affecting fundamental physical properties and functionalities of the hosting materials. Here we…
This note illustrates the possibility in simple loaded string models of trapping most of the system energy in a single degree of freedom for very long times, demonstrating in particular that the robustness of the trapping is enhanced by…
The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining the device performance and degradation. This paper presents an…
In this work, we propose a new approach based on positron annihilation spectroscopy to estimate the concentration of vacancy-type defects induced by self-ion irradiation in tungsten at room temperature, 500, and 700{\deg}C. Using…
A hypercritical value for the magnetic field is determined, which provides the full compensation of the positronium rest mass by the binding energy in the maximum symmetry state and disappearance of the energy gap separating the…