Alan Kalitsov
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magnetization of the system changes in a reversible way with the…
We study the electrical transport properties of ensembles of bismuth telluride (Bi2Te3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi2Te3 nanoplates are fabricated by surface treatment after dropping the…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show…
We have optimized the exponents of Gaussian s and p basis functions for the elements H, B-F, and Al-Cl using the pseudopotentials of Goedecker, Teter, and Hutter [Phys. Rev. B 54, 1703 (1996)] by minimizing the total energy of dimers. We…
We predict that the spin-transfer, $T_{i,||}$, and field-like, $T_{i,\bot}$, components of the {\it local} spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The {\it spin-mixing} enhancement is due to the…
We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without}…