English

Zero-bias anomaly in disordered wires

Mesoscale and Nanoscale Physics 2007-05-23 v2

Abstract

We calculate the low-energy tunneling density of states ν(ϵ,T)\nu(\epsilon, T) of an NN-channel disordered wire, taking into account the electron-electron interaction non-perturbatively. The finite scattering rate 1/τ1/\tau results in a crossover from the Luttinger liquid behavior at higher energies, νϵα\nu\propto\epsilon^\alpha, to the exponential dependence ν(ϵ,T=0)exp(ϵ/ϵ)\nu (\epsilon, T=0)\propto \exp{(-\epsilon^*/\epsilon)} at low energies, where ϵ1/(Nτ)\epsilon^*\propto 1/(N \tau). At finite temperature TT, the tunneling density of states depends on the energy through the dimensionless variable ϵ/ϵT\epsilon/\sqrt{\epsilon^* T}. At the Fermi level ν(ϵ=0,T)exp(ϵ/T)\nu(\epsilon=0,T) \propto \exp (-\sqrt{\epsilon^*/T}).

Keywords

Cite

@article{arxiv.cond-mat/0106448,
  title  = {Zero-bias anomaly in disordered wires},
  author = {E. G. Mishchenko and A. V. Andreev and L. I. Glazman},
  journal= {arXiv preprint arXiv:cond-mat/0106448},
  year   = {2007}
}

Comments

5 pages, 1 figure