We report on the non-destructive measurement of Young's modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we extract Young's modulus in (100) plane, EY,(100) = 261.4+/-20.6 GPa, for beta-Ga2O3 nanoflakes synthesized by low-pressure chemical vapor deposition (LPCVD), and Young's modulus in [010] direction, EY,[010] = 245.8+/-9.2 GPa, for beta-Ga2O3 nanobelts mechanically cleaved from bulk beta-Ga2O3 crystal grown by edge-defined film-fed growth (EFG) method. The Young's moduli extracted directly on nanomechanical resonant device platforms are comparable to theoretical values from first-principle calculations and experimentally extracted values from bulk crystal. This study yields important quantitative nanomechanical properties of beta-Ga2O3 crystals, and helps pave the way for further engineering of beta-Ga2O3 micro/nanoelectromechanical systems (M/NEMS) and transducers.
@article{arxiv.2107.04958,
title = {Young's Modulus and Corresponding Orientation in \beta-Ga2O3 Thin Films Resolved by Nanomechanical Resonators},
author = {Xu-Qian Zheng and Hongping Zhao and Zhitai Jia and Xutang Tao and Philip X. -L. Feng},
journal= {arXiv preprint arXiv:2107.04958},
year = {2021}
}
Comments
11 Pages, 5 Figures, with 3 Pages of Supplementary Material and 1 Supplementary Figure