The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO2/n-Si junction increases significantly by ∼1.04 eV with the graphene interlayer inserted at Al/SiO2 interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer.
@article{arxiv.2208.08044,
title = {Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface},
author = {Wonho Song and Jung-Yong Lee and Junhyung Kim and Jinyoung Park and Jaehyeong Jo and Eunseok Hyun and Jiwan Kim and Daejin Eom and Gahyun Choi and Kibog Park},
journal= {arXiv preprint arXiv:2208.08044},
year = {2025}
}