Wavelength dependence of laser-induced excitation dynamics in silicon
Abstract
Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron-phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.
Keywords
Cite
@article{arxiv.2206.10817,
title = {Wavelength dependence of laser-induced excitation dynamics in silicon},
author = {Prachi Venkat and Tomohito Otobe},
journal= {arXiv preprint arXiv:2206.10817},
year = {2022}
}
Comments
arXiv admin note: text overlap with arXiv:2202.01964