Wavefronts may move upstream in doped semiconductor superlattices
Mesoscale and Nanoscale Physics
2009-10-31 v1
Abstract
In weakly coupled, current biased, doped semiconductor superlattices, domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and it moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.
Cite
@article{arxiv.cond-mat/0003258,
title = {Wavefronts may move upstream in doped semiconductor superlattices},
author = {A. Carpio and L. L. Bonilla and A. Wacker and E. Schoell},
journal= {arXiv preprint arXiv:cond-mat/0003258},
year = {2009}
}
Comments
12 pages, 11 figures, 2-column RevTex, Phys. Rev. E 61, 1 May 2000