Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are \tau ~ 2\cdot10^9 s in air and \tau ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.
@article{arxiv.1202.2015,
title = {Very low bias stress in n-type organic single crystal transistors},
author = {Mario Barra and Flavia V. Di Girolamo and Nikolas A. Minder and Ignacio Gutiérrez Lezama and Zhihua Chen and Antonio Facchetti and Alberto F. Morpurgo and Antonio Cassinese},
journal= {arXiv preprint arXiv:1202.2015},
year = {2015}
}
Comments
Submitted to Applied Physics Letters; 14 pages, 3 figures