English

Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)

Materials Science 2022-10-24 v4

Abstract

Using the normal incidence x-ray standing wave technique as well as low energy electron microscopy we have investigated the structure of quasi-freestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the (63×63)R30\left(6\sqrt{3}\times6\sqrt{3}\right)R30^\circ reconstructed graphitized 6H-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is mono-atomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.

Keywords

Cite

@article{arxiv.2111.08926,
  title  = {Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)},
  author = {You-Ron Lin and Susanne Wolff and Philip Schädlich and Mark Hutter and Serguei Soubatch and Tien-Lin Lee and F. Stefan Tautz and Thomas Seyller and Christian Kumpf and François C. Bocquet},
  journal= {arXiv preprint arXiv:2111.08926},
  year   = {2022}
}