English

Vertical absorption edge and universal onset conductance in semi-hydrogenated graphene

Mesoscale and Nanoscale Physics 2015-05-14 v1

Abstract

We show that for graphene with any finite difference in the on-site energy between the two sub-lattices (Δ\Delta), The optical absorption edge is determined by the Δ\Delta. The universal conductance will be broken and the conductance near the band edge varies with frequency as 1/ω21/\omega^2. Moreover, we have identified another universal conductance for such systems without inversion symmetry, i.e., the onset conductance at the band edge is % \sigma_c=2\sigma_0=\pi e^2/2h, independent of the size of the band gap. The total integrated optical response is nearly conserved despite of the opening of the band gap.

Keywords

Cite

@article{arxiv.0911.2040,
  title  = {Vertical absorption edge and universal onset conductance in semi-hydrogenated graphene},
  author = {Lei Chen and Zhongshui Ma and C. Zhang},
  journal= {arXiv preprint arXiv:0911.2040},
  year   = {2015}
}

Comments

4 pages, 4 figures