Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential step towards exploiting the full potential of this class of materials is their large-scale, on-chip integration with high-resolution, top-down patterning. The development of such patterning methods for perovskite films is challenging because of their intrinsic ionic nature and adverse reactions with the solvents used in standard lithography processes. Here, we introduce a versatile and precise method comprising photolithography and reactive ion etching (RIE) processes that can be tuned to accommodate different perovskite compositions and morphologies. Our method utilizes conventional photoresists at reduced temperatures to create micron-sized features down to 1 μm, providing high reproducibility from chip to chip. The patterning technique is validated through atomic force microscopy (AFM), X-ray diffraction (XRD), optical spectroscopy, and scanning electron microscopy (SEM). It enables the scalable and high-throughput on-chip monolithic integration of MHPs.
@article{arxiv.2411.15286,
title = {Versatile Top-Down Patterning Technique for Perovskite On-Chip Integration},
author = {Federico Fabrizi and Saeed Goudarzi and Sana Khan and Tauheed Mohammad and Liudmila Starodubtceva and Piotr J. Cegielski and Felix Thiel and Sercan Özen and Maximilian Schiffer and Felix Lang and Peter Haring Bolívar and Thomas Riedl and Gerhard Müller-Newen and Surendra B. Anantharaman and Maryam Mohammadi and Max C. Lemme},
journal= {arXiv preprint arXiv:2411.15286},
year = {2025}
}