Van-Hove tuning of Fermi surface instabilities through compensated metallicity
Abstract
Van-Hove (vH) singularities in the vicinity of the Fermi level facilitate the emergence of electronically mediated Fermi surface instabilities. This is because they provide a momentum-localized enhancement of density of states promoting selective electronic scattering channels. High-temperature topological superconductivity has been argued for in graphene at vH filling which, however, has so far proven inaccessible due to the demanded large doping from pristine half filling. We propose compensated metallicity as a path to unlock vH-driven pairing close to half filling in an electronic honeycomb lattice model. Enabled by an emergent multi-pocket fermiology, charge compensation is realized by strong breaking of chiral symmetry from intra-sublattice hybridization, while retaining vH dominated physics at the Fermi level. We conclude by proposing tangible realizations through quantum material design.
Keywords
Cite
@article{arxiv.2312.07653,
title = {Van-Hove tuning of Fermi surface instabilities through compensated metallicity},
author = {Hendrik Hohmann and Matteo Dürrnagel and Matthew Bunney and Stefan Enzner and Tilman Schwemmer and Titus Neupert and Giorgio Sangiovanni and Stephan Rachel and Ronny Thomale},
journal= {arXiv preprint arXiv:2312.07653},
year = {2025}
}
Comments
5 pages, 2 figures