Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications

Shuang Zhou; Lu You; Hailin Zhou; Yong Pu; Zhigang Gui; Junling Wang

Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications

Materials Science 2020-09-07 v1

Authors: Shuang Zhou , Lu You , Hailin Zhou , Yong Pu , Zhigang Gui , Junling Wang

Abstract

Copper indium thiophosphate, CuInP2S6, has attracted much attention in recent years due to its van der Waals layered structure and robust ferroelectricity at room temperature. In this review, we aim to give an overview of the various properties of CuInP2S6, covering structural, ferroelectric, dielectric, piezoelectric and transport properties, as well as its potential applications. We also highlight the remaining questions and possible research directions related to this fascinating material and other compounds of the same family.

Keywords

CuInP2S6 van der Waals layered ferroelectricity physical properties device applications review

Cite

@article{arxiv.2009.02097,
  title  = {Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications},
  author = {Shuang Zhou and Lu You and Hailin Zhou and Yong Pu and Zhigang Gui and Junling Wang},
  journal= {arXiv preprint arXiv:2009.02097},
  year   = {2020}
}

Comments

to be published in Frontiers of Physics

Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications

Abstract

Keywords

Cite

Comments

Related papers