Valley-Selective Landau-Zener Oscillations in Semi-Dirac p-n Junctions
Abstract
We study transport across p-n junctions of gapped two-dimensional semi-Dirac materials: nodal semimetals whose energy bands disperse quadratically and linearly along distinct crystal axes. The resulting electronic properties --- relevant to materials such as TiO/VO multilayers and -(BEDT-TTF)I salts --- continuously interpolate between those of mono- and bi-layer graphene as a function of propagation angle. We demonstrate that tunneling across the junction depends on the orientation of the tunnel barrier relative to the crystalline axes, leading to strongly non-monotonic current-voltage characteristics, including negative differential conductance in some regimes. In multi-valley systems these features provide a natural route to engineering valley-selective transport.
Keywords
Cite
@article{arxiv.1611.10356,
title = {Valley-Selective Landau-Zener Oscillations in Semi-Dirac p-n Junctions},
author = {K. Saha and R. Nandkishore and S. A. Parameswaran},
journal= {arXiv preprint arXiv:1611.10356},
year = {2017}
}
Comments
7 pages, 7 figures, appendices