Valley filter in strain engineered graphene
Mesoscale and Nanoscale Physics
2010-08-06 v2
Abstract
We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic gates. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters.
Keywords
Cite
@article{arxiv.1005.5088,
title = {Valley filter in strain engineered graphene},
author = {T. Fujita and M. B. A. Jalil and S. G. Tan},
journal= {arXiv preprint arXiv:1005.5088},
year = {2010}
}
Comments
4 pages, 3 figures; minor corrections, updated Figs. 2 and 3, added references