Valence band orbital polarization in III-V ferromagnetic semiconductors

A. A. Freeman; K. W. Edmonds; G. van der Laan; R. P. Campion; N. R. S. Farley; A. W. Rushforth; T. K. Johal; C. T. Foxon; B. L. Gallagher; A. Rogalev; F. Wilhelm

doi:10.1103/PhysRevB.77.073304

Valence band orbital polarization in III-V ferromagnetic semiconductors

Materials Science 2009-11-13 v1 Mesoscale and Nanoscale Physics

Authors: A. A. Freeman , K. W. Edmonds , G. van der Laan , R. P. Campion , N. R. S. Farley , A. W. Rushforth , T. K. Johal , C. T. Foxon , B. L. Gallagher , A. Rogalev , F. Wilhelm

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Abstract

The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn 4p states to the Mn K edge spectra.

Keywords

x-ray magnetic circular dichroism valence band orbital magnetic moment ferromagnetic semiconductors magnetic anisotropy strain effects XMCD

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@article{arxiv.0801.0673,
  title  = {Valence band orbital polarization in III-V ferromagnetic semiconductors},
  author = {A. A. Freeman and K. W. Edmonds and G. van der Laan and R. P. Campion and N. R. S. Farley and A. W. Rushforth and T. K. Johal and C. T. Foxon and B. L. Gallagher and A. Rogalev and F. Wilhelm},
  journal= {arXiv preprint arXiv:0801.0673},
  year   = {2009}
}

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5 pages, 2 figures

Valence band orbital polarization in III-V ferromagnetic semiconductors

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