Using electronic structure changes to map the H-T phase diagram of alpha'-NaV2O5

A. B. Sushkov; J. L. Musfeldt; S. A. Crooker; J. Jegoudez; A. Revcolevschi

doi:10.1103/PhysRevB.63.220401

Using electronic structure changes to map the H-T phase diagram of alpha'-NaV2O5

Strongly Correlated Electrons 2009-11-07 v1

Authors: A. B. Sushkov , J. L. Musfeldt , S. A. Crooker , J. Jegoudez , A. Revcolevschi

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We report polarized optical reflectance studies of \alpha'-NaV2O5 as a function of temperature (4-45 K) and magnetic field (0-60 T). Rung directed electronic structure changes, as measured by near-infrared reflectance ratios \Delta R(H)=R(H)/R(H=0 T), are especially sensitive to the phase boundaries. We employ these changes to map out an H-T phase diagram. Topological highlights include the observation of two phase boundaries slightly below T_{SG}, enhanced curvature of the 34 K phase boundary above 35 T, and, surprisingly, strong hysteresis effects of both transitions with applied field.

Keywords

electronic structure phase diagram optical reflectance magnetic field effects hysteresis effects

Cite

@article{arxiv.cond-mat/0103503,
  title  = {Using electronic structure changes to map the H-T phase diagram of alpha'-NaV2O5},
  author = {A. B. Sushkov and J. L. Musfeldt and S. A. Crooker and J. Jegoudez and A. Revcolevschi},
  journal= {arXiv preprint arXiv:cond-mat/0103503},
  year   = {2009}
}

Comments

4 pages, 3 figures, PRB accepted

Using electronic structure changes to map the H-T phase diagram of alpha'-NaV2O5

Abstract

Keywords

Cite

Comments

Related papers