Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2
Abstract
The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.
Cite
@article{arxiv.2412.13863,
title = {Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2},
author = {Maria Ramos and Tanweer Ahmed and Bao Q. Tu and Eleni Chatzikyriakou and Lucía Olano-Vegas and Beatriz Martín-García and M. Reyes Calvo and Stepan S. Tsirkin and Ivo Souza and Félix Casanova and Fernando de Juan and Marco Gobbi and Luis E. Hueso},
journal= {arXiv preprint arXiv:2412.13863},
year = {2024}
}