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Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser

Quantum Physics 2015-12-09 v1 Atomic Physics

Abstract

We report on the implementation of a high fidelity universal gate-set on optical qubits based on trapped 88^{88}Sr+^+ ions for the purpose of quantum information processing. All coherent operations were performed using a narrow linewidth diode laser. We employed a master-slave configuration for the laser, where an ultra low expansion glass (ULE) Fabry-Perot cavity is used as a stable reference as well as a spectral filter. We characterized the laser spectrum using the ions with a modified Ramsey sequence which eliminated the affect of the magnetic field noise. We demonstrated high fidelity single qubit gates with individual addressing, based on inhomogeneous micromotion, on a two-ion chain as well as the M{\o}lmer-S{\o}rensen two-qubit entangling gate.

Keywords

Cite

@article{arxiv.1505.02503,
  title  = {Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser},
  author = {Nitzan Akerman and Nir Navon and Shlomi Kotler and Yinnon Glickman and Roee Ozeri},
  journal= {arXiv preprint arXiv:1505.02503},
  year   = {2015}
}

Comments

21 pages, 13 figures

R2 v1 2026-06-22T09:31:35.203Z