Uniform Oxygen Doping Leads to Superconductivity in FeTe Films

Mao Zheng; Hefei Hu; Can Zhang; Brian Mulcahy; Jianmin Zuo; James Eckstein

Uniform Oxygen Doping Leads to Superconductivity in FeTe Films

Superconductivity 2013-10-23 v2 Materials Science

Authors: Mao Zheng , Hefei Hu , Can Zhang , Brian Mulcahy , Jianmin Zuo , James Eckstein

Abstract

FeTe is known to become a superconductor when doped with oxygen. Using layer by layer growth of single crystal films by molecular beam epitaxy (MBE), we have studied how oxygen incorporates. If oxygen is supplied during growth of a layer, it substitutes for tellurium inhomogeneously in oxygen domains that are not associated with superconductivity. When oxygen is supplied after growth, it diffuses homogeneously into the crystalline film and incorporates interstitially. Only the interstitial oxygen causes superconductivity to emerge. This suggests that the superconductivity observed in this material is spatially uniform and not filamentary.

Keywords

FeTe films Superconductivity Oxygen doping Molecular beam epitaxy Interstitial oxygen Uniform superconductivity

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@article{arxiv.1301.4696,
  title  = {Uniform Oxygen Doping Leads to Superconductivity in FeTe Films},
  author = {Mao Zheng and Hefei Hu and Can Zhang and Brian Mulcahy and Jianmin Zuo and James Eckstein},
  journal= {arXiv preprint arXiv:1301.4696},
  year   = {2013}
}

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4 pages, 4 figures

Uniform Oxygen Doping Leads to Superconductivity in FeTe Films

Abstract

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