Underetching from simple stochastic etching kinetics
Abstract
The morphological richness of electrochemical semiconductor etching is not sufficiently counterparted yet by theoretical modeling. This paper investigates a minimal version of the Current-Burst model with Aging of F\"oll and Carstensen and demonstrates for a restricted geometry that the Aging concept is essential for underetching, or cavity generation. If the influence of Aging is neglected, the dynamics reduces to a Random Etching Model similar to the Random Deposition model. This computer {\sl gedanken experiment} demonstrates that the stochastic dynamics with ageing-dependent kinetic reaction probabilities accounts for the different etching morphologies compared to those obtained in surface roughening and related systems.
Cite
@article{arxiv.cond-mat/0410541,
title = {Underetching from simple stochastic etching kinetics},
author = {Jens Christian Claussen and Jürgen Carstensen},
journal= {arXiv preprint arXiv:cond-mat/0410541},
year = {2010}
}
Comments
3 pages (2 figs included)